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| Key Parameters VRRM = 1700 IFAVM = 1310 IFSM = 15.0 VF0 = 0.74 rF = 0.25 V A kA V m Avalanche Rectifier Diode 5SDA 11D1702 Doc. No. 5SYA 1119 - 01 Apr-98 Features * * * * * Optimized for line frequency rectifiers Low on-state voltage, narrow VF-bands for parallel operation Self protected against transient overvoltages Guaranteed maximum avalanche power dissipation Industry standard housing Blocking Part number VRRM VRSM IRRM PRSM 5SDA 11D1702 1700 1870 5SDA 11D1402 1400 1540 50 70 50 mA kW kW 5SDA 11D1102 Condition 1100 1200 f tP tP tP = 50 Hz = 10 ms = 20 s = 20 s tP Tj Tj Tj Tj = 10 ms = 160C = 160C = 45C = 160C VRRM Mechanical data FM a Mounting force min. max. Acceleration Device unclamped Device clamped Weight Surface creepage distance Air strike distance 10 kN 12 kN 50 m/s 2 200 m/s 0.25 kg 30 mm 20.5 mm 2 m DS Da ABB Semiconductors AG ABB Semiconductors AG 5SDA 11D1702 On-state IFAVM IFRMS IFSM It VF0 rF VF min VF max 2 Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Threshold voltage Slope resistance On-state voltage On-state voltage 1310 A 2060 A 15 kA 16 kA 113010 A s 107010 A s 0.74 V 0.25 m 1.05 V 1.20 V 3 2 3 2 Half sine wave, TC = 85C tp tp tp tp IF IF = = = = 10 ms 8.3 ms 10 ms 8.3 ms Tj = Tj = 160C 25C Tj = 160C After surge: VR 0V = 1000 - 3000 A = 1800 A Thermal Tj RthJC Storage and operating junction temperature range Thermal resistance junction to case RthCH Thermal resistance case to heat sink 80 K/kW 80 K/kW 40 K/kW 16 K/kW 8 K/kW Anode side cooled Cathode side cooled Double side cooled Single side cooled Double side cooled -40...160C Analytical function for transient thermal impedance: 45 40 Zth 35 30 25 20 Fm =10...12 kN Double Side Cooling ZthJC(t) = i R (K/kW) i (s) 1 20.95 0.396 R (1- e i i =1 2 10.57 0.072 3 7.15 4 -t/ i ) 4 1.33 [K/kW] 15 10 5 0 10-3 2 3 4 5 67 0.009 0.0044 10-2 2 3 4 5 67 10-1 t [s] 2 3 4 5 56 100 2 3 4 5 67 101 For a given case temperature Tc at ambient temperature Ta the maximum on-state current can be calculated as follows: IFAVM = -VF0 + (VF0)2 + 4 * f * rf * P 2 * f 2 * rf or 2 IFAVM (A) T max (C) Rthja (K/kW) f= 2 P (W) Tc (C) RthJC (K/kW) for DC current for half-sine wave for 120el., sine for 60 el., sine VF0 (V) Ta (C) rF () where P= TJ max - TC Rthjc P= TJ max - TA Rthja 1 2.5 3.1 6 Doc. No. 5SYA 1119-01 Feb-98 ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 |
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